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Dalian University of Technology has made new progress in broadband photodetector research
[China Instrument Network Instrument R&D] Recently, Li Xiaoqian, an associate professor of the School of Microelectronics of Dalian University of Technology, and Zou Haiyang, Ph.D., a doctoral student in the School of Materials Science and Technology of Georgia Institute of Technology, have made new advances in broadband photodetector research.
The team designed a special thin-film electrode layer on the light detector made of two semiconductor materials: silicon and ZnO nanowires. This structure can greatly improve the absorption of near-infrared light by reducing the reflection of light. . At the same time, by applying external stress on the ZnO nanowires, polarization is generated at the interface, and light detection performance is improved. The performance of the light in the near-UV 442 nm band is increased by 78%, and the response in the near-infrared region is also 1060 nm. Increased by about 20%, while its measurement limit and linear relationship has also been greatly improved.
The team used this device for the first time to study and discover the different effects of polarization on the photo-excited electrons and holes at the interface, which is of great significance for improving related theories and developing more excellent optoelectronic devices. The work was published in the famous academic journal "Advanced Materials". Associate Professor Li Xiaoqian and Dr. Zou Haisheng jointly signed the paper as the co-first author.
Broadband photodetectors are electronic devices that can convert large and large wavelengths of light signals into electrical signals. They are widely used in communications systems, medical applications, thermal imaging, environmental monitoring, and defense technology. As an important semiconductor material, silicon occupies an important position in the semiconductor industry. However, due to silicon's poor absorption of near-infrared light above 900 nm, this greatly limits the application of silicon in broadband photodetectors.
(Title: Dalian University of Technology has made new progress in broadband photodetector research)