Rao Feng and colleagues at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences have developed a new phase change material - scandium-antimony-tellurium alloy that can achieve both polycrystalline and glassy phases in less than 1 nanosecond Conversion between states. This research, published in this week's issue of Science, broke through the memory speed limit of phase-change memory (PCRAM) and laid the foundation for our autonomous memory technology. After decades of development, computers have become smaller, faster and cheaper, and their storage performance continues to be challenged even harder. Static / dynamic random access memory (SRAM cache / DRAM memory) is a temporary storage medium for exchanging data directly with a computer's central processing unit, allowing data to be taken or stored as desired. At the beginning of this century, scientists have proposed that PCRAM is a promising new type of non-volatile memory that stores "0" and "1" respectively by switching between two phase states. The most commonly used phase change material currently available is GST. In order to meet the demand of high-speed random storage in today's computers, the phase transition must be completed within 10 nanoseconds, whereas the phase transition speed of the GST Usually tens to hundreds of nanoseconds, too slow to match or replace traditional DRAM and SRAM memories. Rao Feng and colleagues through the theoretical calculations, the addition of transition metal to the antimony tellurium alloy, screened out at higher temperatures through the formation of more stable scandium telluride chemical bond to accelerate the nucleation of the scandium and tellurium alloy. They also synthesized the new phase-change material and demonstrated experimentally that the new material can quickly and completely invert the phase transition between the crystal and the glass state at 700 picoseconds (0.7 nanosecond). The researchers said that this speed increase, making phase-change memory is expected to replace the existing high-speed memory into practical, the future will further boost the overall performance of the computer greatly improved to faster, lower power consumption, longer life direction. UKL Bearing Manufacturing Co., Ltd., , https://www.bearingukl.com